fjx2222a ? npn epitaxial silicon transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com fjx2222a rev. b2 1 may 2010 fjx2222a npn epitaxial silicon transistor features ? general purpose transistor ? collector-emitter voltage: v ceo = 40v ? collector dissipation: p c (max) = 325mw absolute maximum ratings t a = 25c unless otherwise noted electrical characteristics t a = 25c unless otherwise noted symbol parameter value units v cbo collector-base voltage 75 v v ceo collector-emitter voltage 40 v v ebo emitter-base voltage 6 v i c collector current 600 ma p c collector power dissipation 325 mw t j junction temperature 150 c t stg storage temperature 150 c symbol parameter conditions min. max. units bv cbo collector-base breakdown voltage i c =10 a, i e =0 75 v bv ceo collector-emitter breakdown voltage i c =10ma, i b =0 40 v bv ebo emitter-base breakdown voltage i e =10 a, i c =0 6 v i cbo collector cut-off current v cb =60v, i e =0 0.01 a h fe * dc current gain v ce =10v, i c =0.1ma v ce =10v, i c =1ma v ce =10v, i c =10ma v ce =10v, i c =150ma v ce =10v, i c =500ma 35 50 75 100 40 300 v ce (sat) * collector-emitter saturation voltage i c =150ma, i b =15ma i c =500ma, i b =50ma 0.3 1.0 v v v be (sat) * base-emitter saturation voltage i c =150ma, i b =15ma i c =500ma, i b =50ma 0.6 1.2 2.0 v v f t current gain bandwidth product i c =20ma, v ce =20v, f=100mhz 300 mhz 1. base 2. emitter 3. collector 1 2 sot-323 3 s1p marking
fjx2222a ? npn epitaxial silicon transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com fjx2222a rev. b2 2 electrical characteristics (continued) t a = 25c unless otherwise noted * pulse test: pw 300 s, duty cycle 2% symbol parameter conditions min. max. units c ob output capacitance v cb =10v, i e =0, f=1mhz 4 8 pf nf noise figure i c =100 a, v ce =10v, r s =1k ? , f=1khz 4db t on turn on time v cc =30v, i c =150ma, v be =0.5v, i b1 =15ma 35 ns t off turn off time v cc =30v, i c =150ma, i b1 =i b2 =15ma 285 ns
fjx2222a ? npn epitaxial silicon transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com fjx2222a rev. b2 3 typical performance characteristics figure 1. dc current gain figure 2. collector-base saturation voltage base-emitter saturation voltage figure 3. output capacitance figure 4. current gain bandwidth product 1 10 100 1000 10 100 1000 10000 v ce = 10v h fe , dc current gain i c [a], collector current 1 10 100 1000 0.01 0.1 1 10 v ce (sat) v be (sat) i c = 10 i b v be (sat), v ce (sat)[v], saturation voltage i c [ma], collector current 1 10 100 0 2 4 6 8 10 12 i e = 0 f = 1mhz c ob [pf], capacitance v cb [v], collector-base voltage 1 10 100 1000 10 100 1000 v ce = 20v f t [mhz], current gain bandwidth product i c [ma], collector current
fjx2222a ? npn epitaxial silicon transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com fjx2222a rev. b2 4 mechanical dimensions dimensions in millimeters sot-323 2.000.20 0.950.15 0.90 0.10 3 3 0.135 1.250.10 2.100.10 0.10 min 0.2750.100 1.300.10 +0.04 ?0.01 1.000.10 0.05 +0.05 ?0.02
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